发明名称 |
DEVICES AND METHODS OF FORMING FINFETS WITH SELF ALIGNED FIN FORMATION |
摘要 |
Devices and methods for forming semiconductor devices with FinFETs are provided. One method includes, for instance: obtaining an intermediate semiconductor device with a substrate and at least one shallow trench isolation region; depositing a hard mask layer over the intermediate semiconductor device; etching the hard mask layer to form at least one fin hard mask; and depositing at least one sacrificial gate structure over the at least one fin hard mask and at least a portion of the substrate. One intermediate semiconductor device includes, for instance: a substrate with at least one shallow trench isolation region; at least one fin hard mask over the substrate; at least one sacrificial gate structure over the at least one fin hard mask; at least one spacer disposed on the at least one sacrificial gate structure; and at least one pFET region and at least one nFET region grown into the substrate. |
申请公布号 |
US2015091094(A1) |
申请公布日期 |
2015.04.02 |
申请号 |
US201314043243 |
申请日期 |
2013.10.01 |
申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
WAN Jing;WEI Andy;ZHAO Lun;YANG Dae Geun;LIU Jin Ping;LUO Tien-Ying;BOUCHE Guillaume;HARIHARAPUTHIRAN Mariappan;GAIRE Churamani |
分类号 |
H01L27/12;H01L21/762;H01L21/84 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
obtaining an intermediate semiconductor device, comprising:
a substrate with at least one shallow trench isolation region; depositing a hard mask layer over the intermediate semiconductor device; etching the hard mask layer to form at least one fin hard mask; and depositing at least one sacrificial gate structure over the at least one fin hard mask and at least a portion of the substrate. |
地址 |
Grand Cayman KY |