MULTI-LAYER SEMICONDUCTOR DEVICE STRUCTURE

摘要

A semiconductor device structure and a method of fabricating a semiconductor device structure are provided. A first device layer is formed over a substrate, where an alignment structure is patterned in the first device layer. A dielectric layer is provided over the first device layer. The dielectric layer is patterned to include an opening over the alignment structure. A second device layer is formed over the dielectric layer. The second device layer is patterned using a mask layer, where the mask layer includes a structure that is aligned relative to the alignment structure. The alignment structure is visible via the opening during the patterning of the second device layer.

主权项

1. A method of fabricating a semiconductor device structure, the method comprising:
forming a first device layer over a substrate, wherein an alignment structure is patterned in the first device layer; providing a dielectric layer over the first device layer; patterning the dielectric layer to include an opening over the alignment structure; forming a second device layer over the dielectric layer; and patterning the second device layer using a mask layer, the mask layer including a structure that is aligned relative to the alignment structure, wherein the alignment structure is visible via the opening during the patterning of the second device layer.