3D SEMICONDUCTOR DEVICE AND 3D LOGIC ARRAY STRUCTURE THEREOF

摘要

A 3D semiconductor device and a 3D logic array structure thereof are provided. The 3D semiconductor device includes an array structure, a periphery line structure and a 3D logic array structure. The array structure has Y contacts located at a side of the array structure. Y is within MN-1 to MN. Y, M and N are natural numbers. M is larger or equal to 2. The 3D logic array structure includes N sets of gate electrodes, an input electrode and Y output electrodes. Each set of the gate electrodes has M gate electrodes. The Y output electrodes connect the Y contacts. The M·N gate electrodes and the input electrode connect the periphery line structure.

主权项

1. A 3D semiconductor device, comprising:
an array structure, having Y first contacts located at a first side of the array structure, wherein Y is within MN-1 to MN, Y, M and N are natural numbers, and M is larger or equal to 2; a first periphery line structure; and a first 3D logic array structure, including: N sets of first gate electrodes, wherein each set of the first gate electrodes has M first gate electrodes; a first input electrode; and Y first output electrodes; wherein the Y first output electrodes connect the Y first contacts, the M·N first gate electrodes and the first input electrode connect the first periphery line structure.