发明名称 |
PROCESS FOR FABRICATING FIN-TYPE FIELD EFFECT TRANSISTOR (FinFET) STRUCTURE AND PRODUCT THEREOF |
摘要 |
A process for fabricating a fin-type field effect transistor (FinFET) structure is described. A semiconductor substrate is patterned to form a fin. A spacer is formed on the sidewall of the fin. A portion of the fin is removed, such that the spacer and the surface of the remaining fm together define a cavity. A piece of a semiconductor compound is formed from the cavity, wherein the upper portion of the piece of the semiconductor compound laterally extends over the spacer. |
申请公布号 |
US2015091059(A1) |
申请公布日期 |
2015.04.02 |
申请号 |
US201314042190 |
申请日期 |
2013.09.30 |
申请人 |
United Microelectronics Corp. |
发明人 |
Hung Yu-Hsiang;Fu Ssu-I;Chang Chung-Fu;Wu Yen-Liang;Fan Cho-Han;Lin Chien-Ting |
分类号 |
H01L29/66;H01L29/267;H01L29/78 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
1. A process for fabricating a fin-type field effect transistor (FinFET) structure, comprising:
patterning a semiconductor substrate to form a plurality of fins; forming a gate dielectric layer on surfaces of the fins; trimming the gate dielectric layer to reduce a thickness thereof; and forming a spacer material layer on the trimmed gate dielectric layer. |
地址 |
Hsinchu TW |