发明名称 |
METHOD FOR FORMING LOW-TEMPERATURE POLYSILICON THIN FILM, THIN FILM TRANSISTOR AND DISPLAY DEVICE |
摘要 |
A method for forming low-temperature polysilicon thin film, a thin film transistor and a display device are provided. The method for forming low-temperature polysilicon thin film comprises: depositing an amorphous silicon thin film on a base substrate; covering the amorphous silicon thin film with an anti-reflective optical film; performing photolithography and etching on the anti-reflective optical film such that light condensing structures are provided in an array on the anti-reflective optical film; and irradiating the amorphous silicon thin film with the anti-reflective optical film covered by laser light such that the amorphous silicon film is converted into the low-temperature polysilicon thin film. The method may improve the grain size and uniformity of the low-temperature polysilicon thin film, make full use of the energy of the incident laser light, facilitate the reduction of the production cost of the low-temperature polysilicon thin film, and improve the performance of the low-temperature polysilicon thin film transistor. |
申请公布号 |
US2015091010(A1) |
申请公布日期 |
2015.04.02 |
申请号 |
US201314365227 |
申请日期 |
2013.12.10 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
Wang Lei;Tian Xueyan;Im Jang Soon |
分类号 |
H01L29/786;H01L21/027;H01L21/02 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming a low-temperature polysilicon thin film comprising:
depositing an amorphous silicon thin film on a base substrate; covering the amorphous silicon thin film with an anti-reflective optical film; performing photolithography and etching on the anti-reflective optical film such that light condensing structures are provided in an array on the anti-reflective optical film; and irradiating the amorphous silicon thin film with the anti-reflective optical film covered by laser light such that the amorphous silicon film is converted into the low-temperature polysilicon thin film. |
地址 |
Beijing CN |