| 摘要 |
The electronic device according to an embodiment of the present invention includes a semiconductor memory. The semiconductor memory comprises: a first laminated structure including a first word line disposed on a substrate and extended in a first direction, a first bit line extended in a second direction intersecting with the first direction on the first word line, and a first variable resistance layer interposed between the first word line and the first bit line; a second laminated structure including a second bit line disposed on the first laminated structure, and extended in the second direction, a second word line extended in the first direction on the second bit line, and a second variable resistance layer disposed between the second word line and the second bit line; and a first selection element layer interposed between the first bit line and the second bit line. |
