半导体装置;SEMICONDUCTOR DEVICE

摘要

本发明的一个方式的目的之一是提供一种使用氧化物半导体且在维持良好的电特性的同时实现微型化的半导体装置。该半导体装置包括：氧化物半导体膜及障壁膜；与氧化物半导体膜电连接的源极电极及汲极电极；与氧化物半导体膜、源极电极以及汲极电极接触的闸极绝缘膜；以及与闸极绝缘膜接触的闸极电极，其中，障壁膜与氧化物半导体膜使用同一材料形成在同一表面上，并且，障壁膜的导电率高于氧化物半导体膜。; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a gate insulating film in contact with the oxide semiconductor film, the source electrode, and the drain electrode; and a gate electrode in contact with the gate insulating film. The blocking film contains the same material as the oxide semiconductor film, is on the same surface as the oxide semiconductor film, and has a higher conductivity than the oxide semiconductor film.