manufacturing method of complex pattern with InGaAlP light emitting doide using wet etching and InGaAlP light emitting doide thereby

摘要

The present invention relates to a method for manufacturing a mixture pattern through wet etching and a photoelectron element using the same. More particularly, the present invention relates to a method for manufacturing an InGaAlP-based light emitting diode (LED) with a mixture pattern through wet etching, and an InGaAlP-based LED with a mixture pattern manufactured thereby. The method for manufacturing an InGaAlP-based LED with a mixture pattern through wet etching comprises the steps of forming a first conductivity-type InGaAlP layer on a substrate; forming an InGaAlP multi-quantum well layer on the first conductivity-type InGaAlP layer; forming a second conductivity-type InGaAlP layer on the InGaAlP multi-quantum well layer, forming a photoresist pattern on the second conductivity-type InGaAlP layer to form a mask pattern layer determining a first pattern, and performing wet etching using the mask pattern layer as a mask to form a second pattern corresponding to a shape of the first pattern. By manufacturing the mixture pattern including two or more patterns through the general photolithography method and the wet etching, an excellent light extracting structure can be manufactured through a very simple process, compared with a light extracting structure including a single pattern or surface roughness, and thus, the present invention can be widely, easily applied to the LED field.