| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a sputtering method capable of effectively improving a coverage rate when a processing object is the one on which three or more, for instance, of holes having a prescribed aspect ratio are formed by patterning and a metal film is to be formed over the entire surface of the processing object including the holes. <P>SOLUTION: The processing object W and a target 2 prepared according to a metal film to be formed on the processing object are arranged opposite to each other in a vacuum chamber 1, and a perpendicular magnetic field MF is generated in such a way that the perpendicular magnetic field acts on the entire surface of the processing object. A sputtering gas is introduced into the vacuum chamber, prescribed power is supplied to the target to form plasma in the vacuum chamber, and the target is sputtered. The sputtering gas is argon, and the partial pressure of the argon in the vacuum chamber is held in the range of 5-30 Pa during sputtering to form a film. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
