| 摘要 |
<p>Provided is catalytic CVD whereby a tungsten linear catalytic body heated by conduction of electricity to an extremely high temperature between 1,500 and 1,800ºC and an aluminum cylindrical base heated to 250 to 260ºC are disposed in parallel inside a reaction chamber; a mixed gas of SiH4 and B2H6, a mixed gas of SiH4 and H2, and a mixed gas of SiH4 and NH3 are introduced in succession to inside the reaction chamber, which has been brought to vacuum status by a vacuum pump, and catalytically reacted with the heated catalyst; the decomposition products reach the substrate; and amorphous silicon-based films are deposited in succession as the layer for preventing charge injection, the photoconductive layer, and the surface protective layer, the CVD method being characterized in that before the surface protective layer is formed, the linear catalyst body is maintained away from the substrate surface in order to minimize the effect of radiant heat from the linear catalyst body and to sufficiently lower the substrate temperature.</p> |
