发明名称 Transistor arrangement with semiconductor chips between two substrates
摘要 An electronic device comprising a first substrate, a second substrate, a first semiconductor chip comprising a transistor, comprising a first mounting surface bonded to the first substrate and comprising a second mounting surface bonded to the second substrate, and a second semiconductor chip comprising a first mounting surface bonded to the first substrate and comprising a second mounting surface bonded to the second substrate, wherein the first semiconductor chip comprises a via electrically coupling a first transistor terminal at its first mounting surface with a second transistor terminal at its second mounting surface.
申请公布号 US2015092375(A1) 申请公布日期 2015.04.02
申请号 US201314044232 申请日期 2013.10.02
申请人 Infineon Technologies Austria AG 发明人 Otremba Ralf;Hoeglauer Josef;Chong Chooi Mei
分类号 H01L23/538;H01L21/02 主分类号 H01L23/538
代理机构 代理人
主权项 1. An electronic device, comprising: a first substrate; a second substrate; a first semiconductor chip comprising a transistor, a first mounting surface bonded to the first substrate and a second mounting surface bonded to the second substrate; a second semiconductor chip comprising a first mounting surface bonded to the first substrate and comprising a second mounting surface bonded to the second substrate; wherein the first semiconductor chip comprises a via electrically coupling a first transistor terminal at its first mounting surface with a second transistor terminal at its second mounting surface.
地址 Villach AT