发明名称 |
System and method for providing a redistribution metal layer in an integrated circuit |
摘要 |
A system and method is disclosed for providing a redistribution metal layer in an integrated circuit. The redistribution metal layer is formed from the last metal layer in the integrated circuit during manufacture of the integrated circuit before final passivation is applied. The last metal layer provides sites for solder bump pads used in flip chip interconnection. The redistribution metal layer can be (1) a flat layer deposited over the next to last metal layer through an opening in a dielectric layer, or (2) deposited over an array of vias connected to the next to last metal layer. Space between the solder bump pads is deposited with narrower traces for connecting active circuit areas below. A final passivation layer is deposited to ensure product reliability. |
申请公布号 |
EP2849225(A3) |
申请公布日期 |
2015.04.01 |
申请号 |
EP20140191744 |
申请日期 |
2003.03.06 |
申请人 |
STMICROELECTRONICS, INC. |
发明人 |
THOMAS, DANIELLE A;SIEGEL, HARRY MICHAEL;DO BENTO VIEIRA, ANTONIO A;CHIU, ANTHONY M |
分类号 |
H01L23/485;H01L23/52;H01L21/3205;H01L21/60;H01L23/12;H01L23/31 |
主分类号 |
H01L23/485 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|