发光二极体之制造方法;METHOD FOR MANUFACTURING A LIGHT EMITTING DIODE

摘要

本发明提供一种发光二极体之制造方法，包括提供一基底；形成第一半导体层；形成主动层；形成第二半导体层；移除部分第二半导体层及部分主动层，露出部分第一半导体层；顺应性沉积透明导电层于第二半导体层之顶面与侧壁及第一半导体层露出的部分；形成图案化罩幕层于透明导电层上以遮蔽部分位于第二半导体层上的透明导电层；进行湿蚀刻步骤以移除透明导电层未被图案化罩幕层遮蔽之部分；于湿蚀刻步骤完成后，进行乾蚀刻步骤以完全移除未被图案化罩幕层遮蔽之透明导电层；移除图案化罩幕层；形成第一电极；及形成第二电极。; forming a first semiconductor layer; forming an active layer; forming a second semiconductor layer; removing a portion of the second semiconductor layer and a portion of the active layer to expose a portion of the first semiconductor layer; conformally depositing a transparent conductive layer over a top surface and side walls of the second semiconductor layer and over the exposed portion of the first semiconductor layer; forming a patterned mask layer over the transparent conductive layer to mask a portion of the transparent conductive layer disposed over the second semiconductor layer; performing a wet etch process to remove a portion of the transparent conductive layer which is not masked by the patterned mask layer; after the wet etch process, performing a dry etch process to completely remove the portion of the transparent conductive layer which is not masked by the patterned mask layer; removing the patterned mask layer; forming a first electrode; and forming a second electrode.