薄膜电晶体及其制造方法;THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

一种薄膜电晶体，包括：一基材；一氧化物半导体层，设置于该基材上；一源极电极与一汲极电极，各自连接至该氧化物半导体层并相对于该氧化物半导体层彼此面对；一绝缘层，设置于该氧化物半导体层上；以及一闸极电极，设置于该绝缘层上。该绝缘层包括：一第一层，其包括矽氧化物(SiOx)；一第二层，其系一氢阻挡层；以及一第三层，其包括矽氮化物(SiNx)。该第一层、第二层以及第三层系接续堆叠。; an oxide semiconductor layer disposed on the substrate; a source electrode and a drain electrode each connected to the oxide semiconductor layer and facing each other with respect to the oxide semiconductor layer; an insulating layer disposed on the oxide semiconductor layer; and a gate electrode disposed on the insulating layer. The insulating layer includes a first layer that includes silicon oxide (SiOx), a second layer that is a hydrogen blocking layer, and a third layer that includes silicon nitride (SiNx). The first, second and third layers are sequentially stacked.