以急速热处理移除晶格差排的异质磊晶层形成技术;FORMATION OF HETEROEPITAXIAL LAYERS WITH RAPID THERMAL PROCESSING TO REMOVE LATTICE DISLOCATIONS

摘要

本发明系揭示藉先后使用原子层沉积(ALD)及急速热退火而在一矽基片上成长氮化镓层以进行氮化镓元件之元件制造的方法及装置。氮化镓系直接在矽上或在已成长在该矽基片上之氮化铝的阻挡层上成长。一或两层系藉急速热退火而经热处理。该ALD方法较佳使用一低于550℃且较佳低于350℃的反应温度。该急速热退火步骤使该涂覆表面之温度上升至一范围自550至1500℃的温度，费时少于12微秒。 Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550 ℃ and preferable below 350℃. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500℃