半导体结构及其制造方法;SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME

摘要

一种半导体结构及其制造方法。半导体结构的制造方法包括以下步骤。形成一N型漂移层(N drift layer)。形成一N型缓冲层(N buffer layer)于N型漂移层上，N型缓冲层包括一N型掺杂物。形成一P型重掺杂层(P+ implantation layer)于N型缓冲层上，P型重掺杂层包括一P型掺杂物。以一雷射光源照射N型缓冲层及P型重掺杂层以活化N型掺杂物及P型掺杂物。其中，雷射光源包括一红外光(IR)及一绿光雷射(green laser)，红外光以大于300毫米/秒(mm/s)至600毫米/秒之扫描速度(scan speed)照射N型缓冲层及P型重掺杂层，红外光包括复数个红外光脉冲，红外光脉冲之脉冲时间(pulse time)为大于30奈秒(ns)至200奈秒。; an N buffer layer, comprising an N dopant, is formed on the N drift layer; a p implantation layer, comprising a P dopant, is formed on the N buffer layer; and the N buffer layer and the P implantation layer are irradiated by a laser source to activate the N dopant and the P dopant. The laser source includes an IR and a green laser. The IR is irradiated on the N buffer layer and the P implantation layer with a scan speed of larger than 300 mm/s to 600 mm/s. The IR includes a plurality of IR pulses, of which the pulse time is larger than 30 ns to 200 ns.