| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor laser which can suppress weakening of breaking strength to an external force to improve manufacturing yield despite a structure in which an organic material having a low dielectric constant is inserted below an electrode. <P>SOLUTION: The semiconductor laser comprises: an element body 10 including a semiconductor laser part 10a outputting light and a light modulation part 10b provided on an output side of the semiconductor laser part 10a for modulating the light on the same substrate. The light modulation part 10b includes: a light waveguide layer through which light is guided; buried layers 12, 13 provided adjacent to the light waveguide layer and each composed of an organic material having a low dielectric constant; a first insulation film 14 provided on surfaces of the buried layers 12, 13; and an upper electrode 16 provided on the first insulation film 14 for supplying electric signals to the light waveguide layer. The semiconductor laser comprises second insulation films 17 provided on a top face of the first insulation film 14 and on a top face of the upper electrode 16. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
