半导体装置;SEMICONDUCTOR DEVICE

摘要

为了提供可实现适于微型化布局的半导体装置，且其可促进被写入在定位于距位元线杂质扩散区域最远处之记忆体胞的资讯之读取。一种半导体装置，包含：沿X方向延伸成一直线的位元线(43)；沿X方向延伸的第一及第二水平作用区域(81及82)，及被配置在该第一及该第二水平区域之间且相对于该X方向成倾斜的倾斜作用区域(83)；且具有配置在位元线杂质扩散区域之中心处的作用区域(19-1)；配置在该第一水平作用区域区段(81)中的第一字线(89)；配置在该第二水平作用区域区段(82)中的第二字线(95)；以及配置在倾斜作用区域区段(83)中彼此相邻的第三及第四字线(98及103)，该位元线杂质扩散区域插置于第三字线(98)与第四字线(103)之间。;To provide a semiconductor device that can realize a layout suited for miniaturization and which facilitates reading of the information written to a memory cell located furthest from a bit line impurity diffusion region. ;Resolution Means ;A semiconductor device including a bit line 43 extending in a straight line in an X direction; a first and a second horizontal active region 81 and 82 extending in the X direction, and a sloped active region 83 arranged between the first and the second horizontal regions and inclined with respect to the X direction; and having an active region 19-1 arranged at the center of a bit line impurity diffusion region; a first word line 89 arranged in the first horizontal active region segment 81; a second word line 95 arranged in the second horizontal active region segment 82; and a third and a fourth word line 98 and 103 arranged in the sloped active region segment 83 next to each other with the bit line impurity diffusion region interposed therebetween.