| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a surface processing method and a surface processing device, which process a surface of a workpiece with high smoothness. <P>SOLUTION: The surface processing method has a third step to introduce an ion source 31 of a gaseous carbon cluster into a vacuum chamber 12 in which the workpiece 32 is contained without using a carrier gas, subsequently to apply a high frequency voltage to the ion source and making it into plasma to generate a carbon cluster ion 33, and to apply a negative voltage to the workpiece 32 and to ion process it by making its surface irradiated with the carbon cluster ion 33. <P>COPYRIGHT: (C)2011,JPO&INPIT |
