| 摘要 |
<p>There is provided a seed crystal for silicon carbide single crystal growth, which is capable of suppressing crystal defects that arise from the interface between a seed crystal and graphite, and producing a high quality silicon carbide single crystal having a low crystal defect density, with good reproducibility. As such a seed crystal for silicon carbide single crystal growth, use is made of a seed crystal for silicon carbide single crystal growth (13) which is attached to the lid of a graphite crucible charged with a raw material silicon carbide powder, and which has a seed crystal (4) formed of silicon carbide having one surface defined as a growth surface (4a) for growing a silicon carbide single crystal by a sublimation method, and a carbon film (12) formed on the surface (4b) opposite to the growth surface of the seed crystal (4), wherein the film density of the carbon film (12) is 1.2 g/cm 3 to 3.3 g/cm 3 .</p> |
