| 摘要 |
Provided is a sputtering target-backing plate assembly for a 450-mm wafer, wherein the amount of warpage of the target developed during sputtering is 4 mm or less. Further provided is a method of manufacturing a sputtering target-backing plate assembly for a 450-mm wafer, the method comprising bonding a sputtering target material selected from copper, titanium, tantalum, nickel, cobalt, tungsten or alloys thereof with a backing plate made of copper, a copper alloy, an aluminum alloy, titanium or a titanium alloy at a temperature of 200 to 600°C, thereby the amount of warpage of the target developed during sputtering being 4 mm or less. An object of the present invention is to attempt to suppress detachment of a target from a backing plate and development of a crack by controlling development of warpage which occurs in a large sputtering target and to achieve uniform deposition properties. |
