| 摘要 |
Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode comprises a first conductive semiconductor layer; a mesa located on the first conductive semiconductor layer, and including an active layer and a second conductive semiconductor layer; a first ohmic contact structure contacting with the first conductive semiconductor layer; a second ohmic contact structure contacting with the second conductive semiconductor layer on the mesa; a lower insulation layer covering the mesa and the first conductive semiconductor layer, and including a first opening exposing the first ohmic contact structure and a second opening exposing the second ohmic contact structure; and a current distribution layer connected to the first ohmic contact layer exposed through the first opening of the lower insulation layer, and including a third opening exposing the second opening. The first ohmic contact structure is formed by being separated from the current distribution layer, thereby the range of selecting metal material of the current distribution layer becomes wider, and the light reflective ration of the current distribution layer can be improved. |
