| 摘要 |
To provide a semiconductor unit including chips performing uniform parallel operation, and a low-thermal-resistance, low-cost and high-reliability semiconductor device produced by use of this semiconductor unit. A plurality of small semiconductor chips (SiC-Di chips (2)) of one and the same kind formed by use of an SiC substrate which is a wide gap substrate are sandwiched between two conductive plates (common copper plates (1) and (8)) and connected in parallel to thereby form a semiconductor unit (100). In this manner, there can be provided a high-reliability semiconductor unit (100) in which parallel operation of the semiconductor chips (SiC-Di chips (2)) is uniformized so that breakdown caused by current concentration can be prevented. |
