| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which dielectric strength can be enhanced while suppressing variation in partial discharge characteristics, and to provide a manufacturing method therefor. <P>SOLUTION: The semiconductor device includes a semiconductor chip 1, an insulating substrate 2 on which the semiconductor chip 1 is mounted, a base plate 3 with a through hole 3a on which the insulating substrate 2 is mounted, a case 4 having a screw hole 4a communicating with the through hole 3a in a state installed on the base plate 3 and having a space surrounding the insulating substrate 2, a screw 5 inserted into the through hole 3a and the screw hole 4a and fixing the case 4 and the base plate 3, and a filler 6 provided in the screw hole 4a and having a relative permittivity larger than that of air. In a state where the case 4 and the base plate 3 are fixed by means of the screw 5, the filler 6 is provided so as to fill the bottom face 4b side from the tip 5b of the shaft 5a of the screw 5, at a predetermined height from the bottom face 4b of the screw hole 4a, without covering the side surface 5c of the shaft 5a of the screw 5. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
