发明名称 Solid state oscillator
摘要 1,095,627. Semi-conductor devices. HITACHI Ltd. Feb. 25, 1966 [March 5, 1965], No. 8512/66. Heading H1K. High frequency oscillations are generated in a semi-conductor body through which a current is passed perpendicularly to a magnetic field the magnitude of which controls the frequency. The frequency is further controlled by subjecting the body to mechanical stress. Figs. 1 and 2 (not shown) illustrate a semi-conductor body (5) mounted in a cavity attached to a waveguide, this assembly being placed in a container filled with liquid nitrogen or liquid helium. The container is placed between the poles of a magnet. The frequency of the oscillator is varied by altering the thrust applied to the semi-conductor body by an insulating rod (6). Fig. 3 (not shown) represents a similar embodiment in which the semi-conductor body is housed in a piston-tuned cavity adjacent to which are superconductive coils-at (26)-to apply the magnetic field. The assembly is housed in a container filled with liquid nitrogen the inlet (22) being tightly stopped with glass wool. The embodiment of Fig. 4 is a low frequency device (e.g. of the order of 100 kc/s.) in which the oscillator element is mounted on a silica substrate 40. The output frequency is too low for distribution by waveguide so to obtain the output in load 49 one face 47 of the oscillator is made optically flat and is contacted by a similarly flat face of a semiconductor body 46 containing a PN junction to provide an output from the plasma density waves from the oscillator body. The semiconductor used is a material the significant impurity of which has been at least partially compensated, preferably to an extent of greater than 50%. Suitable semi-conductors are indium antimonide (doped with tellurium), lead telluride, silicon and germanium. The oscillator may be used in conjunction with a detector (also operated at low temperature) as a superheterodyne oscillator or it may be used alone as a detector to provide an oscillatory output only when an input signal is applied.
申请公布号 GB1095627(A) 申请公布日期 1967.12.20
申请号 GB19660008512 申请日期 1966.02.25
申请人 HITACHI LIMITED 发明人
分类号 H03B15/00 主分类号 H03B15/00
代理机构 代理人
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