发光二极体晶粒的制造方法;MATHOD OF MANUFACTURING LIGHT EMITTING DIODE

摘要

一种发光二极体晶粒的制造方法，包括以下步骤：提供一基板；在该基板表面形成缓冲层；在该缓冲层表面形成过渡层，该过渡层为InGaN材质；继续在该过渡层上生长磊晶层，该磊晶层包括依次生长的第一半导体层、发光层及第二半导体层；对该过渡层进行活化处理，即对该过渡层进行镭射照射，该镭射的波长大于420nm，且活化温度为1000-1400℃以及将该基板和缓冲层自该磊晶层上分离。; sequentially disposing a buffer layer on the substrate; sequentially disposing a transitional layer on the buffer layer, and the transitional layer being made of InGaN material; disposing an epitaxial layer on the transitional layer, and the epitaxial layer including a first semiconductor layer, a light emitting layer and a second semiconductor layer in sequence; activating the transitional layer in a manner of irradiating the transitional layer by laser; separating the substrate and the buffer layer from the epitaxial layer. A wavelength of the laser is over 420nm, and an operating temperature of the activating process is 1000-1400℃.