Method of manufacturing tunneling magnetoresistive element

摘要

[Object] To provide a method of manufacturing a perpendicular magnetization-type magnetic element, which does not need a step of depositing MgO.;[Solving Means] The method of manufacturing a magnetoresistive element 1 according to the present invention includes laminating a first layer 30 on a base 10, the first layer 30 including a material containing at least one of Co, Ni, and Fe. Next, a second layer 40 is laminated on the first layer 30, the second layer 40 including Mg. Next, the Mg in the second layer 40 is oxidized to form MgO by applying an oxidation treatment to a laminated body including the first layer 30 and the second layer 40. Next, the second layer 40 is crystallized by applying a heat treatment to the laminated body, and the first layer 30 is caused to be perpendicularly magnetized. According to the manufacturing method, it is possible to manufacture a perpendicular magnetization-type CoFeB—MgO magnetic element without causing a problem arising from the deposition of MgO.

主权项

1. A method of manufacturing a magnetoresistive element, comprising:
laminating a first layer on a base, the first layer including a material containing at least one of Co, Ni, and Fe; laminating a second layer on the first layer, the second layer including Mg; oxidizing the Mg in the second layer to form MgO by applying an oxidation treatment to a laminated body including the first layer and the second layer; and crystallizing the second layer by applying a heat treatment to the laminated body, and causing the first layer to be perpendicularly magnetized.