发明名称 Enhanced error correction in memory devices
摘要 A method of correcting stored data includes reading data stored in a portion of a nonvolatile memory. The method includes, for each particular bit position of the read data, updating a count of data error instances associated with the particular bit position in response to detecting that the read data differs from a corresponding reference value of the particular bit position. The reading of the first portion and the updating of the counts of data error instances are performed for a particular number of repetitions. The method includes identifying each bit position having an associated count of data error instances equal to the particular number of repetitions as a recurring error bit position.
申请公布号 US8996936(B2) 申请公布日期 2015.03.31
申请号 US201213356404 申请日期 2012.01.23
申请人 Sandisk Technologies Inc. 发明人 Sevugapandian Saravanakumar
分类号 G11C29/00;G06F11/00;G01R31/28;G06F11/10;G06F11/07;G11C29/12;G11C29/04;G11C29/20;G11C29/56;G11C29/52;G11C29/44;G01R31/3193 主分类号 G11C29/00
代理机构 Toler Law Group, PC 代理人 Toler Law Group, PC
主权项 1. A method comprising: repeatedly reading and checking data stored in a portion of a nonvolatile memory, wherein the data is stored in memory elements located at a plurality of bit positions in the portion of the nonvolatile memory, wherein repeatedly reading and checking the data includes performing a particular number of repetitions of: reading a bit value of a bit position;comparing the read bit value to a reference value of the bit position to determine whether the read bit value is different from the reference value; andupdating a count of data error instances associated with the bit position in response to detecting that the read bit value differs from the reference value of the bit position; and identifying each particular bit position having an associated count of data error instances equal to the particular number of repetitions as a recurring error bit position.
地址 Plano TX US