发明名称 Semiconductor device comprising a second organic film over a third insulating film wherein the second organic film overlaps with a channel formation region and a second conductive film
摘要 In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.
申请公布号 US8994887(B2) 申请公布日期 2015.03.31
申请号 US201414499313 申请日期 2014.09.29
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamazaki Shunpei;Murakami Satoshi;Koyama Jun;Tanaka Yukio;Kitakado Hidehito
分类号 G02F1/136;G02F1/1343;G02F1/1333;H01L27/12;H01L29/786;G02F1/1362 主分类号 G02F1/136
代理机构 Nixon Peabody LLP 代理人 Nixon Peabody LLP ;Costellia Jeffrey L.
主权项 1. A semiconductor device comprising: a semiconductor layer comprising a channel formation region; a gate electrode over the semiconductor layer; a first insulating film interposed between the semiconductor layer and the gate electrode; a second insulating film over the gate electrode; a source wiring over the second insulating film; a drain wiring over the second insulating film; a first organic film over the source wiring and the drain wiring; a first conductive film over the first organic film; a third insulating film over the first conductive film; a second organic film over the third insulating film; a second conductive film over the third insulating film; a liquid crystal material over the second conductive film; wherein the first conductive film and the second conductive film overlap with each other, wherein the second organic film and the channel formation region overlap with each other, wherein the second organic film and the second conductive film overlap with each other, wherein the second conductive film is electrically connected to one of the source wiring and the drain wiring.
地址 Kanagawa-ken JP