| 发明名称 | Method for driving power semiconductor switches | ||
| 摘要 | A method for driving a controllable power semiconductor switch, having a first input terminal and first and second output terminals coupled to a voltage supply and a load, the first and second output terminals providing an output of the power semiconductor switch, includes adjusting a gradient of switch-off edges of an output current and an output voltage of the power semiconductor switch by a voltage source arrangement coupled to the input terminal. A gradient of switch-on edges of an output current and an output voltage is adjusted by a controllable current source arrangement that is coupled to the input terminal and generates a gate drive current. The profile of the gate drive current from one switching operation to a subsequent switching operation, beginning at a rise in the output current and ending at a decrease in the output voltage, is varied at most within a predefined tolerance band. | ||
| 申请公布号 | US8994413(B2) | 申请公布日期 | 2015.03.31 |
| 申请号 | US201313871288 | 申请日期 | 2013.04.26 |
| 申请人 | Infineon Technologies AG | 发明人 | Kanschat Peter;Arens Andre;Jasberg Hartmut;Schwarzer Ulrich |
| 分类号 | H03K3/00;H03K17/00;H03K17/16 | 主分类号 | H03K3/00 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A method for driving a controllable power semiconductor switch, the power semiconductor switch having a first input terminal and first and second output terminals coupled to a voltage supply and a load, the first and second output terminals providing an output of the power semiconductor switch, the method comprising: adjusting a gradient of switch-off edges of an output current and an output voltage of the power semiconductor switch by a voltage source arrangement coupled to the input terminal; and adjusting a gradient of switch-on edges of the output current and the output voltage by a controllable current source arrangement coupled to the input terminal and that generates a gate drive current, wherein a profile of the gate drive current from one switching operation to a subsequent switching operation, beginning at a rise in the output current and ending at a decrease in the output voltage, is varied at most within a predefined tolerance band; wherein the profile of the gate drive current is adjusted independent of a load current flowing across the first and second output terminals. | ||
| 地址 | Neubiberg DE | ||