Methods and apparatus for selective oxidation of a substrate

摘要

Methods and apparatus for improving selective oxidation against metals in a process chamber are provided herein. In some embodiments, a method of oxidizing a first surface of a substrate disposed in a process chamber having a processing volume defined by one or more chamber walls may include exposing the substrate to an oxidizing gas to oxidize the first surface; and actively heating at least one of the one or more chamber walls to increase a temperature of the one or more chamber walls to a first temperature of at least the dew point of water while exposing the substrate to the oxidizing gas.

主权项

1. A method of oxidizing a first surface of a substrate disposed in a process chamber having a processing volume defined by one or more chamber walls, the method comprising:
actively heating at least one of the one or more chamber walls to increase a temperature of the one or more chamber walls to a first temperature of at least the dew point of water while exposing the substrate to an oxidizing gas to selectively oxidize the first surface for a first period of time beginning when or after the one or more chamber walls reaches the first temperature, wherein the one or more chamber walls increases in temperature from the first temperature to a second temperature during the first period of time and wherein the one or more chamber walls remains above the first temperature for the remainder of the first period of time.