发明名称 RF amplifier
摘要 An RF amplifier suitable for use in an RF transceiver has a circuit including a first transistor pair with the collector of each coupled to one of the two differential output nodes and a common base. A pair of Ft doublers is provided with the emitter of each Ft doubler coupled to one of the transistors in the first transistor pair. Each Ft doubler has a common emitter and a base coupled to one of the differential input nodes. As such, the first transistor pair and the Ft doubler pair are cascode-coupled to provide a wide bandwidth, high gain, and high input impedance RF amplifier.
申请公布号 US8994451(B1) 申请公布日期 2015.03.31
申请号 US201313833893 申请日期 2013.03.15
申请人 Rockwell Collins, Inc. 发明人 Wyse Russell D.;Hageman Michael L.;Hawkins, Jr. Max S.
分类号 H03F3/45 主分类号 H03F3/45
代理机构 代理人 Gerdzhikov Angel N.;Suchy Donna P.;Barbieri Daniel M.
主权项 1. An RF amplifier, comprising: a first transistor pair, each transistor having an emitter, a collector coupled to one of two differential output nodes, and a common base; and an Ft doubler pair, each Ft doubler having a collector coupled to the emitter of one of the first transistor pairs, a common emitter, and a base coupled to one of two differential input nodes; a pair of first impedance networks, wherein each impedance network is coupled in series with the collector of one of the transistors in the first transistor pair, and wherein the pair of first impedance networks are sized to substantially cancel a parasitic capacitance that arises between the base and the collector of each Ft doubler; and a second impedance network coupled between the two differential input nodes.
地址 Cedar Rapids IA US
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