| 发明名称 | Nonvolatile memory device and operating method thereof | ||
| 摘要 | A nonvolatile memory device includes a memory cell array including a main cell area and a retention flag cell area, a retention check unit configured to compare a read result for retention flag cells included in the retention flag cell area to a reference value, and determine a retention state of the retention flag cells according to a comparison result, and a control logic configured to provide a retention check result based on the retention state to the external device in response to a retention check request provided from an external device. | ||
| 申请公布号 | US8995213(B2) | 申请公布日期 | 2015.03.31 |
| 申请号 | US201213711869 | 申请日期 | 2012.12.12 |
| 申请人 | SK Hynix Inc. | 发明人 | Song In Hwan |
| 分类号 | G11C29/00;G11C29/50;G11C16/34 | 主分类号 | G11C29/00 |
| 代理机构 | William Park & Associates Patent Ltd. | 代理人 | William Park & Associates Patent Ltd. |
| 主权项 | 1. A nonvolatile memory device comprising: a memory cell array comprising a main cell area and a retention flag cell area; a retention check unit configured to compare a read result for retention flag cells included in the retention flag cell area to a reference value, and determine a retention state of the retention flag cells according to a comparison result; and a control logic configured to provide a retention check result based on the retention state to an external device in response to a retention check request provided from the external device. | ||
| 地址 | Gyeonggi-do KR | ||