Program condition dependent bit line charge rate

摘要

Methods and devices for charging unselected bit lines are disclosed. The rate at which inhibited (or unselected) bit lines are charged may depend on a program condition. The program condition may be completion of a program loop. As another example, the program condition may be a certain program state completing or nearly completing programming. As one example, the bit lines may be charged at a faster rate prior to the program condition occurring than after the program condition. As another example, the bit lines may be charged at a slower rate prior to the program condition than after the program condition. Charging the unselected bit lines at a slower rate may reduce current consumption. Charging the unselected bit lines at a faster rate may allow for faster programming.

主权项

1. A method of operating non-volatile storage that includes a plurality of bit lines and a plurality of word lines, the method comprising:
a) charging unselected bit lines of the plurality of bit lines to an inhibit voltage at a first rate; b) applying a program voltage to a selected word line of the plurality of word lines after the unselected bit lines have been charged to the inhibit voltage at the first rate; c) repeating said a) and said b) until a program condition that indicates how far programming has progressed is reached; d) charging unselected bit lines of the plurality of bit lines to the inhibit voltage at a second rate that is different from the first rate after the program condition has been reached; and e) applying a program voltage to the selected word line after the unselected bit lines have been charged to the inhibit voltage at the second rate.