| 发明名称 |
Data storage for voltage domain crossings |
| 摘要 |
According to an embodiment, an apparatus includes a data storage device. Data to be stored in the data storage device is level shifted from a first voltage domain to a second voltage domain prior to being stored within the data storage device. The data storage device is powered by the second voltage domain. The apparatus further includes a circuit that is powered by the second voltage domain and that is responsive to data output by the data storage device. |
| 申请公布号 |
US8995207(B2) |
申请公布日期 |
2015.03.31 |
| 申请号 |
US201113208450 |
申请日期 |
2011.08.12 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
Koob Christopher Edward;Lin Jen Tsung;Pyla Manojkumar;Saint-Laurent Martin |
| 分类号 |
G11C7/00;G06F5/06;G11C5/14 |
主分类号 |
G11C7/00 |
| 代理机构 |
|
代理人 |
Kamarchik Peter Michael;Pauley Nicholas J.;Agusta Joseph |
| 主权项 |
1. An apparatus comprising:
a data storage device in a first clock domain, wherein data to be stored in the data storage device is level shifted from a first voltage domain to a second voltage domain. prior to being stored within the data storage device, and wherein the data storage device is powered by the second voltage domain; a circuit powered by the second voltage domain and in a second clock domain, the circuit responsive to output data, wherein the output data is output by the data storage device; and address circuitry powered by the first voltage domain, wherein the data storage device is responsive to an output of the address circuitry, and wherein the address circuitry includes a counter. |
| 地址 |
San Diego CA US |
