High voltage metal-oxide-semiconductor transistor device and manufacturing method thereof

摘要

A lateral double-diffused metal-oxide-semiconductor transistor device includes a substrate having at least a shallow trench isolation formed therein, an epitaxial layer encompassing the STI in the substrate, a gate, and a drain region and a source region formed in the substrate at respective two sides of the gate. The epitaxial layer, the source region and the drain region include a first conductivity type. The gate includes a first portion formed on the substrate and a second portion extending into the STI.

主权项

1. A lateral-diffusion metal-oxide-semiconductor (LDMOS) transistor device comprising:
a substrate having at least a shallow trench isolation (STI) formed therein; an epitaxial layer encompassing the STI in the substrate, the epitaxial layer comprising a first conductivity type, a thickness of the epitaxial layer is smaller than a thickness of the STI; a gate comprising:
a first portion formed on the substrate;a second portion extending into the STI; and a drain region and a source region having the first conductivity type formed in the substrate at respective two sides of the gate.