Transistors, methods of manufacturing thereof, and image sensor circuits with reduced RTS noise

摘要

Transistors, methods of manufacturing thereof, and image sensor circuits with reduced random telegraph signal (RTS) noise are disclosed. In one embodiment, a transistor includes a channel disposed between two isolation regions in a workpiece. The channel has edge regions proximate the isolation regions and a central region between the edge regions. The transistor includes a gate dielectric disposed over the channel, and a gate disposed over the gate dielectric. The transistor includes a voltage threshold modification feature proximate the edge regions configured to increase a voltage threshold of the transistor proximate edge regions relative to the central region of the channel.

主权项

1. A transistor, comprising:
a channel disposed between two isolation regions laterally spaced apart by an uninterrupted portion of a semiconductor material in a workpiece, the channel comprising edge regions proximate the isolation regions and a central region between the edge regions; a gate dielectric disposed over the channel and extending over a portion of the two isolation regions; and a voltage threshold modification feature configured to increase a voltage threshold of the transistor proximate edge regions relative to the central region of the channel, the voltage threshold modification feature comprising a gate disposed over the gate dielectric, the gate having a greater amount of implanted dopants in a central region of the gate than in portions of the gate proximate the two isolation regions.