Hydrogen mitigation schemes in the passivation of advanced devices

摘要

Embodiments of a Silicon Nitride (SiN) passivation structure for a semiconductor device are disclosed. In general, a semiconductor device includes a semiconductor body and a SiN passivation structure over a surface of the semiconductor body. In one embodiment, the SiN passivation structure includes one or more Hydrogen-free SiN layers on, and preferably directly on, the surface of the semiconductor body, a Hydrogen barrier layer on, and preferably directly on, a surface of the one or more Hydrogen-free SiN layers opposite the semiconductor body, and a Chemical Vapor Deposition (CVD) SiN layer on, and preferably directly on, a surface of the Hydrogen barrier layer opposite the one or more Hydrogen-free SiN layers. The Hydrogen barrier layer preferably includes one or more oxide layers of the same or different compositions. Further, in one embodiment, the Hydrogen barrier layer is formed by Atomic Layer Deposition (ALD).

主权项

1. A semiconductor device comprising:
a semiconductor body; and a passivation structure on a surface of the semiconductor body, the passivation structure comprising:
one or more Hydrogen-free Silicon Nitride layers on the surface of the semiconductor body;a Hydrogen barrier layer having more than one oxide layer on a surface of the one or more Hydrogen-free Silicon Nitride layers opposite the semiconductor body; andan additional Silicon Nitride layer on a surface of the Hydrogen barrier layer opposite the one or more Hydrogen-free Silicon Nitride layers.