发明名称 |
Flash multiple-pass write with accurate first-pass write |
摘要 |
An instruction to write to a location in the Flash memory is received. It is determining if the Flash memory exposes a level placement setting associated with defining what voltage range corresponds to what level. In the event it is determined that the Flash memory exposes a level placement setting, an accurate coarse write is performed on the location, including by configuring the level placement setting to be a first value, and after the accurate coarse write is performed on the location, a fine write is performed on the location, including by configuring the level placement setting to be a second value, in response to receiving the instruction. |
申请公布号 |
US8995199(B2) |
申请公布日期 |
2015.03.31 |
申请号 |
US201414478884 |
申请日期 |
2014.09.05 |
申请人 |
SK hynix memory solutions inc. |
发明人 |
Lee Meng-Kun;Wu Yingquan |
分类号 |
G11C11/34;G11C16/10;G11C16/04;G11C16/34;G11C16/12;G11C11/56 |
主分类号 |
G11C11/34 |
代理机构 |
Van Pelt, Yi & James LLP |
代理人 |
Van Pelt, Yi & James LLP |
主权项 |
1. A method for controlling a Flash memory, comprising:
receiving, at a Flash controller, an instruction to write to a location in the Flash memory; determining, at the Flash controller, if the Flash memory exposes a level placement setting associated with defining what voltage range corresponds to what level; and in the event it is determined that the Flash memory exposes a level placement setting, in response to receiving the instruction:
performing an accurate coarse write on the location, including by configuring the level placement setting to be a first value; andafter the accurate coarse write is performed on the location, performing a fine write on the location, including by configuring the level placement setting to be a second value. |
地址 |
San Jose CA US |