发明名称 Flash multiple-pass write with accurate first-pass write
摘要 An instruction to write to a location in the Flash memory is received. It is determining if the Flash memory exposes a level placement setting associated with defining what voltage range corresponds to what level. In the event it is determined that the Flash memory exposes a level placement setting, an accurate coarse write is performed on the location, including by configuring the level placement setting to be a first value, and after the accurate coarse write is performed on the location, a fine write is performed on the location, including by configuring the level placement setting to be a second value, in response to receiving the instruction.
申请公布号 US8995199(B2) 申请公布日期 2015.03.31
申请号 US201414478884 申请日期 2014.09.05
申请人 SK hynix memory solutions inc. 发明人 Lee Meng-Kun;Wu Yingquan
分类号 G11C11/34;G11C16/10;G11C16/04;G11C16/34;G11C16/12;G11C11/56 主分类号 G11C11/34
代理机构 Van Pelt, Yi & James LLP 代理人 Van Pelt, Yi & James LLP
主权项 1. A method for controlling a Flash memory, comprising: receiving, at a Flash controller, an instruction to write to a location in the Flash memory; determining, at the Flash controller, if the Flash memory exposes a level placement setting associated with defining what voltage range corresponds to what level; and in the event it is determined that the Flash memory exposes a level placement setting, in response to receiving the instruction: performing an accurate coarse write on the location, including by configuring the level placement setting to be a first value; andafter the accurate coarse write is performed on the location, performing a fine write on the location, including by configuring the level placement setting to be a second value.
地址 San Jose CA US