Reducing the programming current for memory matrices

摘要

A sector of an electrically programmable non-volatile memory includes memory cells connected to word lines and to bit lines, each cell including at least one transistor having a gate connected to a word line, a drain connected to a bit line and a source connected to a source line. The sector includes at least two distinct wells insulated from one another, each including a number of cells of the sector, being able to take different potentials, and in that the sector has at least one bit line electrically linked to the drain of at least two cells mounted on two distinct wells.

主权项

1. A sector for an electrically programmable non-volatile memory, comprising:
word lines; bit lines; at least one source line; an array of memory cells connected to the word lines and bit lines, each memory cell including at least one transistor having a gate connected to a word line, a drain connected to a bit line and a source connected to the at least one source line; and at least two distinct wells insulated from one another, each well coupled to several memory cells, and being configured to be set to different potentials, the at least two distinct wells dividing each bit line into a first partial sector and a second partial sector, memory cells in the first and second partial sectors being brought to the different potentials during a programming operation; wherein at least one bit line is electrically coupled to the drain of at least two memory cells coupled to the at least two distinct wells.