发明名称 |
Non-volatile memory device |
摘要 |
A non-volatile memory device includes: a memory cell array including a plurality of memory cells each including a first variable resistance element and a first current steering element and a parameter generation circuit including a reference cell including a second variable resistance element and a second current steering element having the same current density-voltage characteristic as that of the first current steering element, wherein a conductive shorting layer for causing short-circuiting between the electrodes is formed on the side surfaces of the second variable resistance element. |
申请公布号 |
US8995170(B2) |
申请公布日期 |
2015.03.31 |
申请号 |
US201314122708 |
申请日期 |
2013.03.27 |
申请人 |
Panasonic Intellectual Property Management Co., Ltd. |
发明人 |
Kawashima Yoshio;Hayakawa Yukio;Mikawa Takumi |
分类号 |
G11C7/00;H01L45/00;H01L27/10;G11C13/00;H01L27/24 |
主分类号 |
G11C7/00 |
代理机构 |
Wenderoth, Lind & Ponack, L.L.P. |
代理人 |
Wenderoth, Lind & Ponack, L.L.P. |
主权项 |
1. A non-volatile memory device comprising:
a substrate; a memory cell array including: a plurality of first lines arranged in parallel to each other above the substrate; a plurality of second lines arranged in parallel to each other crossing the plurality of first lines three-dimensionally; and a plurality of memory cells each including a first variable resistance element and a first current steering element and placed at a corresponding one of cross-points of the first lines and the second lines; and a parameter generation circuit including: a third line placed above the substrate; a fourth line placed above the third line; and a current steering characteristic reference cell placed between and connected to the third line and the fourth line and including a second variable resistance element and a second current steering element having a same current density-voltage characteristic as a current density-voltage characteristic of the first current steering element, wherein the second variable resistance element includes: a lower electrode layer; a variable resistance layer formed above the lower electrode layer; and an upper electrode layer formed above the variable resistance layer, and in the current steering characteristic reference cell, the second variable resistance element has a side surface with a conductive shorting layer for short-circuiting the upper electrode layer and the lower electrode layer. |
地址 |
Osaka JP |