主权项 |
1. A semiconductor device comprising:
a semiconductor substrate on which a predetermined layer is formed; a first pattern extending in plan view in a first direction in the predetermined layer; a second pattern extending in the plan view in parallel with the first pattern in the predetermined layer; and a third pattern between the first and second patterns extending in the plan view in parallel with the first and second patterns in the predetermined layer, wherein the first, second and third patterns have first, second and third end portions in the first direction, respectively, wherein the first and third end portions are arranged in different positions staggered from each other in the plan view in the first direction, wherein the first and the second end portions are substantially aligned along a second direction orthogonal to the first direction, and wherein the first, second, and third patterns occupy a common plane in the predetermined layer extending in the first direction. |