Semiconductor devices including a nanowire and methods of manufacturing the same

摘要

Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.

主权项

1. A semiconductor device comprising:
a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface, the first and second top surfaces connected via the first perpendicular surface; a first region doped with dopants and formed on the first top surface; a first nanowire extended away from the first perpendicular surface in one direction, and being spaced apart from the second top surface, the first nanowire including a channel region touching the first region; a second nanowire extended from the first nanowire in the one direction, being spaced apart from the second top surface, and including a second region doped with dopants and directly contacting the channel region, wherein
the first region is a source and the second region is a drain, orthe first region is a drain and the second region is a source; a gate electrode formed on the first nanowire; and a dielectric layer formed between the first nanowire and the gate electrode.