发明名称 Capacitor and method for fabricating the same
摘要 A method for fabricating a capacitor includes forming a mold structure over a substrate, wherein the mold structure has a plurality of open parts and has a mold layer stacked with a support layer; forming cylinder type lower electrodes in the open parts; forming a first upper electrode over an entire surface of a structure including the cylinder type lower electrodes to fill the cylinder type lower electrodes; defining a through hole that passes through portions of the first upper electrode and the support layer; removing the mold layer through the through hole and exposing the cylinder type lower electrodes; forming a second upper electrode to fill the through hole and spaces between the cylinder type lower electrodes; and forming a third upper electrode to connect the second upper electrode and the first upper electrode with each other.
申请公布号 US8993396(B2) 申请公布日期 2015.03.31
申请号 US201213596007 申请日期 2012.08.27
申请人 SK Hynix Inc. 发明人 Park Jong-Kook;Cho Yong-Tae
分类号 H01L21/77;H01L49/02;H01L29/94;H01L29/66;H01L27/108 主分类号 H01L21/77
代理机构 IP & T Group LLP 代理人 IP & T Group LLP
主权项 1. A method for fabricating a capacitor, comprising: forming a plurality of cylinder type lower electrodes; forming a first upper electrode inside the cylinder type lower electrodes; forming a second upper electrode outside the cylinder type lower electrodes after the forming of the first upper electrode; and forming a third upper electrode that connects the first upper electrode and the second upper electrode.
地址 Gyeonggi-do KR