Micro-electromechanical system devices

摘要

Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.

主权项

1. A method of manufacturing a semiconductor chip comprising MEMS devices, the method comprising:
forming a semiconductive layer over a substrate, the substrate comprising an oxide layer; forming a first trench in the semiconductive layer, the first trench exposing the oxide layer; forming an insulating material layer over a first sidewall and an opposite second sidewall of the first trench, the insulating material layer further formed at least partially over the exposed oxide layer between the first sidewall and the opposite second sidewall; filling the first trench with a conductive material; and forming an air gap by removing the insulating material layer from at least the second sidewall, the air gap being at least formed around top and bottom surfaces of the semiconductive layer.