Semiconductor device and method of bonding different size semiconductor die at the wafer level

摘要

A semiconductor wafer has first and second opposing surfaces. A plurality of conductive vias is formed partially through the first surface of the semiconductor wafer. The semiconductor wafer is singulated into a plurality of first semiconductor die. The first semiconductor die are mounted to a carrier. A second semiconductor die is mounted to the first semiconductor die. A footprint of the second semiconductor die is larger than a footprint of the first semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. The carrier is removed. A portion of the second surface is removed to expose the conductive vias. An interconnect structure is formed over a surface of the first semiconductor die opposite the second semiconductor die. Alternatively, a first encapsulant is deposited over the first semiconductor die and carrier, and a second encapsulant is deposited over the second semiconductor die.

主权项

1. A method of making a semiconductor device, comprising:
providing a semiconductor wafer including an active surface and a second surface opposite the active surface; forming a plurality of conductive vias partially through the active surface of the semiconductor wafer; singulating the semiconductor wafer to separate a first semiconductor die; disposing a second semiconductor die over the first semiconductor die with the active surface oriented toward the second semiconductor die; depositing an encapsulant over and around the first and second semiconductor dies; removing a portion of the second surface to expose a surface of the conductive vias coplanar with the second surface and the encapsulant; and forming an interconnect structure over the first semiconductor die opposite the second semiconductor die, the interconnect structure including a first insulating layer and a first conductive layer.