Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials

摘要

Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.

主权项

1. A method of forming a capacitor, comprising:
depositing inner conductive metal capacitor electrode material over a substrate; forming a capacitor dielectric region outward of the inner conductive metal capacitor electrode material to a thickness no greater than 150 Angstroms, a dielectric constant k of at least 35, and leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V; the forming of the capacitor dielectric region comprising:
depositing an amorphous ZrO2-comprising material to a thickness of from 30 Angstroms to 70 Angstroms outward of the inner conductive metal capacitor electrode material;annealing the amorphous ZrO2-comprising material having thickness of from 30 Angstroms to 70 Angstroms after its deposition to form crystalline ZrO2-comprising material having a thickness of from 30 Angstroms to 70 Angstroms;after the annealing of the amorphous ZrO2-comprising material, depositing an Al2O3-comprising material outward of the crystalline ZrO2-comprising material, the Al2O3-comprising material having a thickness of from 2 Angstroms to 16 Angstroms;depositing an amorphous TiO2-comprising material to a thickness no greater than 50 Angstroms outward of the Al2O3-comprising material; andannealing the amorphous TiO2-comprising material having thickness no greater than 50 Angstroms in the presence of oxygen after its deposition to form crystalline TiO2-comprising material; and after the annealing of the amorphous TiO2-comprising material, depositing outer conductive metal capacitor electrode material outward of the crystalline TiO2-comprising material.