IBAD apparatus and IBAD method

摘要

An IBAD apparatus includes, a target, a sputter ion source irradiating the target with sputter ions to sputter some of constituent particles of the target, a film formation region in which a base material for depositing thereon the particles sputtered from the target is disposed, and an assist ion beam irradiation device irradiating assist ion beams from a direction oblique to the direction of a normal of the film formation surface of the base material disposed in the film formation region, where the sputter ion source includes a plurality of ion guns arranged so as to be able to irradiate the target from an end portion on one side to an end portion on the other side with sputter ion beams, and current values for generating the sputter ion beams of the plurality of ion guns are set respectively.

主权项

1. An IBAD apparatus comprising:
a target; a sputter ion source irradiating the target with sputter ions to sputter some of constituent particles of the target; a film formation region which has a rectangular shape and in which a base material which has a long tape shape for depositing thereon the particles sputtered from the target is disposed; and an assist ion beam irradiation device irradiating assist ion beams from a direction oblique to the direction of a normal of the film formation surface of the base material disposed in the film formation region, wherein: the sputter ion source comprises a plurality of ion guns arranged so as to be able to irradiate the target from an end portion on one side to an end portion on the other side with sputter ion beams; the base material travels in a longitudinal direction of the base material; the target is formed in a rectangular shape so as to correspond to the film formation region, and is disposed such that a long axis of the target corresponds to a travel direction of the base material; the plurality of ion guns is disposed along a longitudinal direction of the long axis of the target and the film formation region; the sputter ion source is disposed parallel to the target such that a distance between each of the plurality of ion guns and the target is constant; and the sputter ion beams from the plurality of ion guns irradiated to the target are parallel to each other.