Semiconductor device with SEG film active region

摘要

A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device separating structure is etched at a predetermined thickness to expose a semiconductor substrate. Then, a SEG film is grown to form an active region whose area is increased. As a result, a current driving power of a transistor located at a cell region and peripheral circuit regions is improved.

主权项

1. A semiconductor device comprising:
a first device separating structure that defines a first active region, wherein an upper surface of the first device separating structure is lower than an upper surface of the first active region, such that a side surface of an upper portion of the first active region does not contact the first device separating structure; a second device separating structure that defines a second active region extending from a side surface of the upper portion of the first active region, wherein the second device separating structure and the second active region are disposed over the first device separating structure; a line-type barrier film extended along a first major direction of the semiconductor device; and a recess gate formed in a recess defined in the first active region along a second major direction perpendicular to the first major direction, wherein the line-type barrier film separates two neighboring second active regions.