Digital silicon photomultiplier detector cells

摘要

A silicon photomultiplier detector cell may include a photodiode region and a readout circuit region formed on a same substrate. The photodiode region may include a first semiconductor layer exposed on a surface of the silicon photomultiplier detector cell and doped with first type impurities; a second semiconductor layer doped with second type impurities; and/or a first epitaxial layer between the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may contact the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may be doped with the first type impurities at a concentration lower than a concentration of the first type impurities of the first semiconductor layer.

主权项

1. A silicon photomultiplier detector cell including a photodiode region and a readout circuit region formed on a same substrate, the photodiode region comprising:
a first semiconductor layer exposed on a surface of the silicon photomultiplier detector cell and doped with p-type impurities; a second semiconductor layer doped with n-type impurities and not exposed on the surface of the silicon photomultiplier detector cell; and a first epitaxial layer doped with the p-type impurities at a concentration lower than a concentration of the p-type impurities of the first semiconductor layer and lower than a concentration of the n-type impurities of the second semiconductor layer; wherein only the first epitaxial layer is between the first semiconductor layer and the second semiconductor layer, and wherein avalanche occurs only in the first epitaxial layer.